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 Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-frequency power amplification For TV vertical deflection output Complementary to 2SB0940, 2S0940A
16.70.3
Unit: mm
0.70.1
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
Features
* High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC * Full-pack package which can be installed to the heat sink with one screw
3.10.1
Solder Dip (4.0)
1.40.1
1.30.2 0.5+0.2 -0.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SD1264 (Base open) 2SD1264A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25C Symbol VCBO VCEO VEBO IC ICP PC Rating 200 150 180 6 2 3 30 2.0 150 -55 to +150 C C V A A W Unit V V
14.00.5
0.80.1
2.540.3 5.080.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1264 2SD1264A VEBO VBE ICBO IEBO hFE1
*
Symbol VCBO VCEO
Conditions IC = 50 A, IE = 0 IC = 5 mA, IB = 0 IE = 500 A, IC = 0 VCE = 10 V, IC = 400 mA VCB = 200 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 400 mA IC = 500 mA, IB = 50 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz
Min 200 150 180 6
Typ
Max
Unit V V
Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
V 1.0 50 50 V A A V MHz
60 50
240
hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) fT
1.0 20
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 60 to 140 P 100 to 240
Publication date: April 2003
SJD00180BED
1
2SD1264, 2SD1264A
PC Ta
50
IC VCE
1.2
1.2
TC=25C IB=7mA 6mA
IC VBE
Collector power dissipation PC (W)
40
Collector current IC (A)
30
(1)
0.8
Collector current IC (A)
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W)
1.0
1.0
TC=100C
25C -25C
5mA 4mA
0.8
0.6
3mA
0.6
20
0.4
2mA
0.4
10
(2) (3) (4)
0.2
1mA
0.2
0
0
40
80
120
160
0
0
4
8
12
16
20
24
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
hFE IC
104
IC/IB=10
fT I C
VCE=10V
1 000
VCE=5V f=1MHz TC=25C
Forward current transfer ratio hFE
103
TC=100C 25C
Transition frequency fT (MHz)
1 10
100
1
TC=100C
25C -25C
10
2
10
-25C
0.1
10
1
0.01 0.01
0.1
1
1 0.01
0.1
0.1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
10
ICP IC Non repetitive pulse TC=25C
Rth t
103
(1)Without heat sink (2)With a 100x100x2mm Al heat sink
Thermal resistance Rth (C/W)
Collector current IC (A)
1
t=0.5ms t=5ms t=1ms DC
102
(1)
10
(2)
0.1
1
0.01
2SD1264A 2SD1264
10-1
0.001
1
10
100
1 000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00180BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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